BAODING, HEBEI PROVINCE, CHINA, January 19, 2026 /EINPresswire.com/ -- In the rapidly evolving global power and energy ...
JINGJIANG, JIANGSU PROVINCE, CHINA, January 19, 2026 /EINPresswire.com/ -- In an era where personal safety, emergency ...
For decades, silicon has ruled as the undisputed leader in power electronics. But as silicon hits its performance limits, gallium-nitride (GaN) power devices are gaining ground. With faster switching ...
WAPA continues to invest in targeted technical training to enhance operational excellence, support infrastructure upgrades, ...
Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ...
Automotive supplier Schaeffler has started mass production of a new high-voltage inverter brick equipped with ROHM’s silicon-carbide (SiC) MOSFET bare chips as part of its strategic partnership. The ...
It has long been known that the simple combination of a depletion-mode MOSFET (and before these were available, a JFET) and a resistor made a simple, serviceable current source such as that seen on ...
InsideNoVa on MSN
Northern Virginia lawmakers aim to limit where high-voltage transmission lines can be built
A case that is playing out in front of the State Corporation Commission regarding a controversial high-voltage transmission ...
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